www.vishay.com 276 document number 81603 rev. 1.2, 14-jun-07 tsop85#.. vishay semiconductors 20427 ir receiver modules for remote control systems description the tsop85#.. - series are two lens miniaturized receiver modules for infrared remote control systems. one pin diode per lens and a preamplifier are assembled on a pcb, the epoxy lens cap is designed as an ir filter. the demodulated output signal can be directly decoded by a microprocessor. the tsop852.. series is for standard ir remote control applications, supporting all major tr ansmission codes. the tsop851.. series is op timised for short burst transmission codes and high data rates. the tsop854.. is optimised for reliable operation even in highly noisy environments. this component has not been qualified according to automotive specifications. features ? photo detectors and preamplifier in one package ? internal filter for pcm frequency ? ttl and cmos compatibility ? output active low ? low power consumption ? supply voltage: 2.7 v to 5.5 v special features ? improved immunity against ambient light ? suitable burst length 10 cycles/burst tsop852.. and tsop854.. ? suitable burst length 6 cycles/burst tsop851.. ? smd assembly with lead (pb)-free reflow soldering ? capable of side or top view ? two lenses for high se nsitivity and wide receiving angle product matrix frequency matrix block diagram application circuit ver y noisy environments standard applications short bursts and high data rates tsop854.. tsop852.. tsop851.. part carrier frequency tsop85#30 30 khz tsop85#33 33 khz tsop85#36 36 khz tsop85#38 38 khz tsop85#40 40 khz tsop85#56 56 khz 30 k v s out demo- g n d pass agc inp u t pi n band d u lator control circ u it 2 3 1, 4, 5 20445 c 1 = 4.7 f tsopxxx x out g n d circ u it c r 1 = 100 + v s g n d transmitte r w ith tsalxxxx v s r 1 +c 1 are recommended to s u ppress po w er s u pply noise. v o 16 8 42_7 c 2 = 47 nf r 2 = 2.2 k r 2 +c 2 are optional to optimize the sensiti v ity. e3
tsop85#.. document number 81603 rev. 1.2, 14-jun-07 vishay semiconductors www.vishay.com 277 absolute maximum ratings t amb = 25 c, unless otherwise specified electrical and opti cal characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value tsop85#.. unit supply voltage v s - 0.3 to + 6.0 v output voltage v o - 0.3 to (v s + 0.3) v output sink current i o 10 ma junction temperature t j 100 c storage temperature range t stg - 25 to + 85 c operating temperature range t amb - 25 to + 85 c soldering temperature t sol 260 c parameter test condition symbol min ty p. max unit supply voltage v s 2.7 5.5 v supply current v s = 3.3 v, e v = 0 i sd 1.0 1.3 1.6 ma e v = 40 kix, sunlight, v s = 3.3 v i sb 1.5 ma transmission distance e v = 0 ir diode tsal6200, i f = 400 ma d35m output voltage low i osl = 0.5 ma, e e = 0.7 mw/m 2 v osl 250 mv threshold irradiance (30 - 40 khz) v s = 3 v pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o e e min 0.2 0.5 mw/m 2 threshold irradiance (56 khz) v s = 3 v pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o e e min 0.25 0.55 mw/m 2 threshold irradiance (30 - 40 khz) v s = 5 v pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o e e min 0.25 0.55 mw/m 2 threshold irradiance (56 khz) v s = 5 v pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o e e min 0.3 0.6 mw/m 2 maximum irradiance t pi - 5/f o < t po < t pi + 6/f o e e max 30 w/m 2 directivity angle of half transmission distance ? 1/2 50 deg
www.vishay.com 278 document number 81603 rev. 1.2, 14-jun-07 tsop85#.. vishay semiconductors typical characteristics t amb = 25 c, unless otherwise specified figure 1. output function figure 2. pulse length and sensitivity in dark ambient figure 3. output function e e t t pi t v o v oh v ol t 16110_2 optical test si g nal (ir diode tsal6200, i f = 0.4 a, 30 p u lses, f = f 0 , t = 10 ms) output si g nal t d t po t pi - 5/f 0 < t po < t pi + 6/f 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 0.1 1 10 100 1000 10000 e e - irradiance (m w /m2) 1690 8 inp u t b u rst d u ration = 950 nm, optical test signal, fig. 1 o u tp u t p u lse t - o u tp u t p u lse w idth (ms) po e e t v o v oh v ol t 600 s 600 s t = 60 ms t on t off 94 8 134 optical test si g nal output si g nal , (see fig. 4) figure 4. output pulse diagram figure 5. frequency dependence of responsivity figure 6. sensitivity in bright ambient t ,t - o u tp u t p u lse w idth (ms) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 0.1 1 10 100 1000 10000 e e - irradiance (m w /m2) 16909 to ff = 950 nm, optical test signal, fig. 3 to n on off f/f 0 - relati v e fre qu ency 2024 8 e /e - rel. responsi v ity e min e 0 0.2 0.4 0.6 0. 8 1.0 1.2 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 tsop 8 52.. and tsop 8 54.. tsop 8 51.. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.01 0.1 1 10 100 e - am b ient dc irradiance ( w /m 2 ) 16911 correlation w ith am b ient light so u rces: 10 w /m 2 1.4 klx (std.ill u m.a, t= 2 8 55 k) 10 w /m 2 8 .2 klx (daylight, t = 5900 k) am b ient, = 950 nm e - threshold irradiance (m w /m ) e min 2
tsop85#.. document number 81603 rev. 1.2, 14-jun-07 vishay semiconductors www.vishay.com 279 figure 7. sensitivity vs. supply voltage disturbances figure 8. sensitivity vs. el ectric field disturbances figure 9. max. envelope du ty cycle vs. burstlength 0.0 0.5 1.0 1.5 2.0 0.1 1 10 100 1000 v srms - ac v oltage on dc s u pply v oltage (m v ) 16912 f = f o f = 10 khz e - threshold irradiance (m w /m2) e min f = 1 khz f = 100 hz e - threshold irradiance (m w /m2) e - field strength of dist u r b ance ( v /m) 20249 e min 0.1 1 10 100 1 10 100 1000 f(e) = f 0 b u rst length (n u m b er of cycles/ bu rst) 20430 max. en v elope d u ty cycle 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 0204060 8 0100 f = 3 8 khz, e e = 2 m w /m 2 tsop 8 51.. tsop 8 52.. tsop 8 54.. figure 10. sensitivity vs . ambient temperature figure 11. relative spectral sensitivity vs. wavelength figure 12. horizontal directivity ? x 0.0 0.1 0.2 0.3 0.4 0.5 0.6 - 30 - 15 0 15 30 45 60 75 90 t am b - am b ient temperat u re (c) 1691 8 sensiti v ity in dark am b ient e - threshold irradiance (m w /m2) e min 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 700 750 8 00 8 50 900 950 1000 1050 1100 - w a v elength (nm) s( )rel - relati v e spectral sensiti v ity 20431 20432 0.1 0.3 0.5 0.7 0.9 8 0 60 40 20 0 - 20 - 40 - 60 - 8 0
www.vishay.com 280 document number 81603 rev. 1.2, 14-jun-07 tsop85#.. vishay semiconductors suitable data format the tsop85#.. series is designed in such a way, that spurious output pulses due to noise or disturbance signals are suppressed. the distinguishing characteristics between data and disturbance signals are carrier frequency, burst length and envelope duty cycle. optimally, the data signal should be close to the band-pass center frequency (e.g. 38 khz) and fulfill the conditions in the table below. examples of suitable data formats are: nec code (repetitive pulse), nec code (repetitive data), toshiba micom format, sharp code, rc5 code, rc6 code, r-2000 code, sony code (tsop852.. and tsop851.. only). when a data signal is applied to the tsop85#.. in the presence of a disturbance signal, the sensitivity of the receiver is reduced to insure that no spurious pulses are present at the output. some examples of disturbance signals which are suppressed are: - dc light (e.g. from tungsten bulbs or sunlight) - continuous signals at any frequency - strongly or weakly modulated noise from fluores cent lamps with electronic ballasts (see figure 13 or figure 14). figure 13. ir signal from fluores cent lamp with low modulation figure 14. ir signal from fluores cent lamp with high modulation 0101520 time (ms) 16920 ir signal ir signal from fl u orescent lamp w ith lo w mod u lation 5 0101520 time (ms) 16921 ir signal ir signal from fl u orescent lamp w ith high mod u lation 10 tsop854.. tsop852.. tsop851.. minimum burst length: 10 cycles/b urst 10 cycles/bur st 6 cycles/burst after each burst of length: a gap time is required of: 10 - 35 cycles 14 cycles 10 - 70 cycles 14 cycles 10 - 70 cycles 10 cycles for bursts greater than: a gap time in the data stream is needed of: 0.9 ms > 8 x burst length 1.8 ms > 4 x burst length 1.8 ms > 1.5 x burst length maximum continuous short bursts/second: 400 800 800 able to suppress noise from fluorescent lamps with modulation type: weak (fig. 13) strong (fig. 14) weak (fig. 13) strong (fig. 14) weak (fig. 13)
tsop85#.. document number 81603 rev. 1.2, 14-jun-07 vishay semiconductors www.vishay.com 281 package dimensions in millimeters 20426
www.vishay.com 282 document number 81603 rev. 1.2, 14-jun-07 tsop85#.. vishay semiconductors taping version tsop..tr dimensions in millimeters 2062 8
tsop85#.. document number 81603 rev. 1.2, 14-jun-07 vishay semiconductors www.vishay.com 283 taping version tsop..tt dimensions in millimeters 20629
www.vishay.com 284 document number 81603 rev. 1.2, 14-jun-07 tsop85#.. vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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